? semiconductor components industries, llc, 2006 may, 2006 ? rev. 0 1 publication order number: nus5530mn/d nus5530mn integrated power mosfet with pnp low v ce(sat) switching transistor this integrated device represents a new level of safety and board ? space reduction by combining the 20 v p ? channel fet with a pnp silicon low v ce(sat) switching transistor. this newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. features ? low r ds(on) (mosfet) and low v ce(sat) (transistor) ? higher efficiency extending battery life ? logic level gate drive (mosfet) ? performance dfn package ? this is a pb ? free device applications ? power management in portable and battery ? powered products; i.e., cellular and cordless telephones and pcmcia cards maximum ratings for p ? channel fet (t a = 25 c unless otherwise noted) rating symbol 5 sec steady state unit drain ? source voltage v ds ? 20 v gate ? source voltage v gs 12 v continuous drain current (t j = 150 c) (note 1) t a = 25 c t a = 85 c i d ? 5.3 ? 3.8 ? 3.9 ? 2.8 a pulsed drain current i dm 20 a continuous source current (note 1) i s ? 5.3 ? 3.9 a maximum power dissipation (note 1) t a = 25 c t a = 85 c p d 2.5 1.3 1.3 0.7 w operating junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.27 in sq [1 oz] including traces). device package shipping ? ordering information http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. NUS5530MNR2G dfn8 (pb ? free) 3000/tape & reel dfn8 case 506al n/c collector source drain emitter base n/c gate (bottom view) pin assignment a = assembly location y = year ww = work week = pb ? free package 1 2 3 4 8 7 6 5 1 8 collector drain (top view) 1 2 3 4 8 7 6 5 1 marking diagram 5530 ayww (note: microdot may be in either location)
nus5530mn http://onsemi.com 2 maximum ratings for pnp transistors (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 35 vdc collector-base voltage v cbo ? 55 vdc emitter-base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 2.0 adc collector current ? peak i cm ? 7.0 a electrostatic discharge esd hbm class 3 mm class c thermal characteristics for p ? channel fet characteristic symbol typ max unit maximum junction ? to ? ambient (note 4) t 5 sec steady state r ja 40 80 50 95 c/w maximum junction ? to ? foot (drain) steady state r jf 15 20 c/w thermal characteristics for pnp transistors characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 635 5.1 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 200 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 1.35 11 w mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 90 c/w thermal resistance, junction ? to ? lead #1 r jl 15 c/w total device dissipation (single pulse < 10 sec) p dsingle (notes 2 & 3) 2.75 w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ 100 mm 2 , 1 oz copper traces. 2. fr ? 4 @ 500 mm 2 , 1 oz copper traces. 3. thermal response.
nus5530mn http://onsemi.com 3 electrical characteristics for p ? channel fet (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.6 ? 1.2 v gate ? body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v ? 1.0 a v ds = ? 16 v, v gs = 0 v, t j = 85 c ? 5.0 on ? state drain current (note 5) i d(on) v ds ? 5.0 v, v gs = ? 4.5 v ? 20 a drain ? source on ? state resistance (note 5) r ds(on) v gs = ? 3.6 v, i d = ? 1.0 a ? 0.050 0.06 v gs = ? 2.5 v, i d = ? 1.0 a 0.070 0.083 forward transconductance (note 5) g fs v ds = ? 10 v, i d = ? 3.9 a 12 mhos diode forward voltage (note 5) v sd i s = ? 2.1 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic (note 6) total gate charge q g v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 3.9 a 9.7 22 nc gate ? source charge q gs 1.2 gate ? drain charge q gd 3.6 input capacitance c iss v ds = ? 5.0 vdc, v gs = 0 vdc, f = 1.0 mhz 710 pf output capacitance c oss 400 reverse transfer capacitance c rss 140 turn ? on delay time t d(on) v dd = ? 10 v, r l = 10 i d ? 1.0 a, v gen = ? 4.5 v, r g = 6 14 30 ns rise time t r 22 55 turn ? off delay time t d(off) 42 100 fall time t f 35 70 source ? drain reverse recovery time t rr i f = ? 1.1 a, di/dt = 100 a/ s 30 60 4. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.27 in sq [1 oz] including traces). 5. pulse test: pulse width 300 s, duty cycle 2%. 6. guaranteed by design, not subject to production testing.
nus5530mn http://onsemi.com 4 electrical characteristics for pnp transistors (t a = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 35 ? 45 ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 55 ? 65 ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 5.0 ? 7.0 ? vdc collector cutoff current (v cb = ? 35 vdc, i e = 0) i cbo ? ? 0.03 ? 0.1 adc collector ? emitter cutoff current (v ces = ? 35 vdc) i ces ? ? 0.03 ? 0.1 adc emitter cutoff current (v eb = ? 6.0 vdc) i ebo ? ? 0.01 ? 0.1 adc on characteristics dc current gain (note 7) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 1.5 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 100 100 100 200 200 200 ? 400 ? collector ? emitter saturation voltage (note 7) (i c = ? 0.1 a, i b = ? 0.010 a) (i c = ? 1.0 a, i b = ? 0.010 a) (i c = ? 2.0 a, i b = ? 0.02 a) v ce(sat) ? ? ? ? ? ? ? 0.10 ? 0.15 ? 0.30 v base ? emitter saturation voltage (note 7) (i c = ? 1.0 a, i b = ? 0.01 a) v be(sat) ? ? 0.68 ? 0.85 v base ? emitter turn ? on voltage (note 7) (i c = ? 2.0 a, v ce = ? 3.0 v) v be(on) ? ? 0.81 ? 0.875 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = ? 0.5 v, f = 1.0 mhz) cibo ? 600 650 pf output capacitance (v cb = ? 3.0 v, f = 1.0 mhz) cobo ? 85 100 pf turn ? on time (v cc = ? 10 v, i b1 = ? 100 ma, i c = ? 1 a, r l = 3 ) t on ? 35 ? ns turn ? off time (v cc = ? 10 v, i b1 = i b2 = ? 100 ma, i c = 1 a, r l = 3 ) t off ? 225 ? ns 7. pulsed condition: pulse width = 300 sec, duty cycle 2%
nus5530mn http://onsemi.com 5 typical electrical characteristics for p ? channel fet 125 c ? 2.5 v 0 20 2.5 16 12 3 1.5 1 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 8 4 0 0.5 figure 1. on ? region characteristics 0 20 16 1.5 12 12 8 4 0.5 0 2.5 3 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 0 0.05 24 0.15 0.1 0 5 figure 3. on ? resistance versus gate ? to ? source voltage ? v gs , gate ? to ? source voltage (volts) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) 21820 14 10 0.15 0.1 6 0.05 figure 4. on ? resistance versus drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c v gs = ? 1.5 v 0.2 13 t j = ? 55 c i d = ? 3.9 a t j = 25 c 0.2 0 75 150 t j = 25 c v gs = 2.5 v i d = ? 3.9 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 2 ? 2 v ? 3 v ? 3.5 v ? 5 v ? 4.5 v ? 4 v 25 c r ds(on), drain ? to ? source resistance ( ) 1.6 v gs = 3.6 v v gs = 4.5 v
nus5530mn http://onsemi.com 6 typical electrical characteristics for p ? channel fet 812 4 016 1200 900 600 300 0 20 ? v ds , drain ? to ? source voltage () figure 6. capacitance variation c, capacitance (pf) figure 7. gate ? to ? source and drain ? to ? source voltage versus total charge q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) t j = 25 c v gs = 0 c oss c iss c rss 1500 ? v ds, drain ? to ? source voltage (volts) 0 1 2 3 4 5 012345678910 0 1 2 3 4 5 6 7 8 9 10 11 q g q gd q gs i d = ? 3.9 a t j = 25 c q gd /q gs = 3.0 figure 8. diode forward voltage versus current 0.3 0.1 0.5 0.7 0.9 5 3 2 1 0 ? i s , source current (amps) ? v sd , source ? to ? drain voltage (volts) v gs = 0 v t j = 25 c 4 0.0001 1 0.01 10 0.1 0.01 square wave pulse duration (sec) 0.1 1 0.001 figure 9. normalized thermal transient impedance, junction ? to ? ambient duty cycle = 0.5 100 1000 normalized effective transient thermal impedance 0.2 single pulse 0.1 0.05 0.02 per unit base = r ja = 80 c/w t jm ? t a = p dm z ja (t) surface mounted p dm t 1 t 2 duty cycle, d = t 1 /t 2
nus5530mn http://onsemi.com 7 typical electrical characteristics for pnp transistor figure 10. collector emitter saturation voltage versus collector current figure 11. collector emitter saturation voltage versus collector current 0.001 i c , collector current (a) 0.1 0.01 i c , collector current (a) 0.1 1.0 0.001 0.05 0 0.001 0.01 0.1 1.0 0.01 0.10 0.15 i c /i b = 100 0.20 0.25 100 c 25 c ?55 c 50 10 v ce(sat) , collector emitter saturation voltage (volts) v ce(sat) , collector emitter saturation voltage (volts) i c /i b = 50 figure 12. dc current gain versus collector current figure 13. base emitter saturation voltage versus collector current figure 14. base emitter turn ? on voltage versus collector current figure 15. input capacitance i c , collector current (a) i c , collector current (a) 0.01 0.001 1.0 0.4 0 0.1 0.001 i c , collector current (a) 1.1 0.6 0.5 0.4 0.3 v eb , emitter base voltage (v) 0 750 550 500 450 350 300 1.5 0.01 h v be(sat) , base emitter saturation 0.1 1.0 , base emitter turn?on voltage (volts) v be(on) 1.0 0.9 0.5 5.0 1.0 400 c ibo , input capacitance (pf) 0.6 0.8 voltage (volts) 700 650 600 0.2 100 c 25 c ?55 c 0.8 0.7 1.0 100 c 25 c ?55 c 3.0 2.0 2.5 3.5 4.0 4.5 fe , dc current gain 0 50 100 150 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 125 c (5 v) 25 c (5 v) ? 55 c (5 v) 125 c (2 v) 25 c (2 v) ? 55 c (2 v)
nus5530mn http://onsemi.com 8 typical electrical characteristics for pnp transistor v ce , (vdc) figure 16. output capacitance v cb , collector base voltage (v) 0 225 125 100 75 25 0 15 5.0 10 50 200 175 150 30 20 25 35 figure 17. safe operating area c obo , output capacitance (pf) 0.01 0.10 1.00 10 0.10 1 10 100 1 ms thermal limits 100 ms 1 s i c , (a) 10 ms 0.01 0.1 1 10 100 1000 d = 0.50 single pulse d = 0.01 d = 0.20 d = 0.05 d = 0.10 t 1 , time (sec) figure 18. normalized thermal response r (t) , transient thermal resistance p(pk) duty cycle = d = t 1 /t 2 jc = 174 c/w t 1 t 2
nus5530mn http://onsemi.com 9 package dimensions dfn8 case 506al ? 01 issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30mm. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 e2 bottom view b e 8 x 0.10 b 0.05 a c c k 8 x note 3 2 x 0.15 c pin one reference top view 2 x 0.15 c 8 x a a1 (a3) 0.08 c 0.10 c c seating plane side view l 8 x 14 5 8 2 x d2 dim min nom max millimeters a 0.80 0.90 1.00 a1 0.00 0.03 0.05 a3 0.20 ref b 0.35 0.40 0.45 d 3.30 bsc d2 0.95 1.05 1.15 e 3.30 bsc e2 1.80 1.90 2.00 e 0.80 bsc k 0.21 ??? ??? l 0.30 0.40 0.50 ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? ?? 1 2x 0.45 0.80 pitch 3.60 1.20 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8x dimensions: millimeters on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 nus5530m n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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